DocumentCode
3419289
Title
RF-MEMS components for broadband applications
Author
Schauwecker, B. ; Strohm, K.M. ; Simon, W. ; Luy, J.-F.
Author_Institution
Res. & Technol., DaimlerChrysier AG, Ulm, Germany
fYear
2003
fDate
11-11 April 2003
Firstpage
166
Lastpage
169
Abstract
Key elements for switching matrices are reported. Single RF-MEMS toggle switches yield an insertion loss of 0.2 dB @ 30 GHz and an isolation of 25dB @ 30 GHz. Shielded RF crosses for routing the signal path in the switching matrix yield an insertion loss of 0.75dB @ 20 GHz in the under-cross path and 0.6 dB (simulated) in the over-cross path with an isolation higher than 40dB between under- and over-cross path. Double 90 degree bends with compensated air-bridges show an insertion loss of less than 0.1dB up to 20 GHz.
Keywords
microswitches; 0.1 dB; 0.2 dB; 0.6 dB; 0.75 dB; 20 GHz; 30 GHz; RF-MEMS component; broadband applications; compensated air-bridge; double 90 degree bend; insertion loss; isolation; over-cross path; shielded RF cross; signal routing; switching matrix; toggle switch; under-cross path; Bridge circuits; Electrodes; Gold; Insertion loss; Radio frequency; Radiofrequency microelectromechanical systems; Resists; Routing; Switches; Transmission line matrix methods;
fLanguage
English
Publisher
ieee
Conference_Titel
Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers. 2003 Topical Meeting on
Conference_Location
Grainau, Germany
Print_ISBN
0-7803-7787-7
Type
conf
DOI
10.1109/SMIC.2003.1196696
Filename
1196696
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