DocumentCode :
3419325
Title :
p-type diamond positive surface photo-voltage
Author :
Shaw, J.L. ; Yater, J.E. ; Pate, Bradford B. ; Feygelson, Tatyana I. ; Hanna, J.M.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
fYear :
2013
fDate :
8-12 July 2013
Firstpage :
1
Lastpage :
3
Abstract :
We report a large positive surface photo-voltage for lightly boron doped (p-type) diamond illuminated with 21.2 eV photons after exposing the surface to atomic hydrogen. We have recorded positive shifts well in excess of the band gap energy. Because the photo-voltage in most p-type materials is negative, we argue the observed positive shift indicates a lack of electron accumulation at the surface, as might be expected when the electron affinity is negative.
Keywords :
diamond; electron affinity; energy gap; hydrogen; photoemission; surface charging; surface photovoltage; atomic hydrogen; band gap energy; electron accumulation; electron volt energy 21.2 eV; lightly boron doped diamond; negative electron affinity; p-type diamond; positive shift; positive surface photovoltage; Atomic measurements; Diamonds; Electric potential; Hydrogen; Photoelectricity; Photonics; Temperature measurement; Atomic Hydrogen; Diamond; Negative Electron Affinity; Surface Charge; Surface Photovoltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Nanoelectronics Conference (IVNC), 2013 26th International
Conference_Location :
Roanoke, VA
Type :
conf
DOI :
10.1109/IVNC.2013.6624751
Filename :
6624751
Link To Document :
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