A 62 GHz reflectometer for biomedical sensor readout in SiGe BiCMOS technology

Author

Laemmle, Benjamin ; Schmalz, Klaus ; Scheytt, Christoph ; Kissinger, Dietmar ; Weigel, Robert

Author_Institution

Inst. for Electron. Eng., Univ. of Erlangen-Nuremberg, Erlangen, Germany

fYear

2012

fDate

16-18 Jan. 2012

Firstpage

45

Lastpage

48

Abstract

In this publication an integrated reflectometer in SiGe BiCMOS technology for sensor readout at 62 GHz is presented. The circuit includes an oscillator, a six-port reflectometer, and a dummy sensor for verification purposes. The circuit has a bandwidth of 8GHz at a center frequency of 62 GHz. It operates at 3.75V supply voltage and consumes 282 mW. The measurement principle is demonstrated and the scattering parameters of the dummy sensor are compared to measurement of a breakout circuit with a commercially available vector network analyzer. The circuit has been fabricated in a 190-GHz SiGe:C BiCMOS technology and occupies an area of 0.9 mm².

Keywords

BiCMOS integrated circuits; Ge-Si alloys; bipolar MMIC; field effect MMIC; readout electronics; reflectometers; SiGe BiCMOS technology; bandwidth 8 GHz; biomedical sensor readout; dummy sensor; frequency 62 GHz; integrated reflectometer; power 282 mW; vector network analyzer; voltage 3.75 V; Biomedical measurements; Detectors; Frequency measurement; Resonant frequency; Transmission line measurements; Vectors; Voltage measurement; BiCMOS; Dielectric Sensor; Millimeter Wave; Network Analyzer Six-Port; Reflectometer; SiGe;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2012 IEEE 12th Topical Meeting on

Conference_Location

Santa Clara, CA

Print_ISBN

978-1-4577-1317-0

Type

conf

DOI

10.1109/SiRF.2012.6160125

Filename

6160125