DocumentCode
341939
Title
A general parameter extraction method for transistor noise models with correlation
Author
Stenarson, J. ; Garcia, M. ; Angelov, I. ; Zirath, H.
Author_Institution
Lab. of Microwave Electron., Chalmers Univ. of Technol., Goteborg, Sweden
Volume
1
fYear
1999
fDate
13-19 June 1999
Firstpage
113
Abstract
A new general direct extraction procedure for transistor noise models including two correlated noise sources is developed. The extraction procedure is demonstrated for a Silicon Carbide (SiC) Metal Semiconductor Field Effect Transistor (MESFET). The extracted model shows good agreement to measured noise parameters.
Keywords
Schottky gate field effect transistors; equivalent circuits; microwave field effect transistors; semiconductor device noise; silicon compounds; wide band gap semiconductors; FET model; HFET; SiC; SiC MESFET; correlated noise sources; direct extraction procedure; general parameter extraction method; transistor noise models; Circuit noise; Equivalent circuits; FETs; Integrated circuit noise; MESFETs; Microwave transistors; Noise measurement; Parameter extraction; Semiconductor device noise; Silicon carbide;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1999 IEEE MTT-S International
Conference_Location
Anaheim, CA, USA
Print_ISBN
0-7803-5135-5
Type
conf
DOI
10.1109/MWSYM.1999.779437
Filename
779437
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