Title :
12% efficiency and 9.5 dBm output power from InP-based heterostructure barrier varactor triplers at 250 GHz
Author :
Melique, X. ; Maestrini, A. ; Lheurette, E. ; Mounaix, P. ; Favreau, M. ; Vanbesien, O. ; Goutoule, J.M. ; Beaudin, G. ; Nahri, T. ; Lippens, D.
Author_Institution :
IEMN, Lille I Univ., Villeneuve d´Ascq, France
Abstract :
9.5 dBm and 12.3% maximum efficiency demonstrated for a 250 GHz Heterostructure Barrier Varactor (HBV) tripler. These state-of-the-art performances can be explained by the highly nonlinear capacitance-voltage characteristics of InGaAs-InAlAs-AlAs diodes having a zero-bias capacitance of 1fF//spl mu/m/sup 2/, a capacitance ratio of 6:1 and a breakdown voltage of 12 V for two barriers. Also the potential of nonlinear transmission lines for harmonic multiplication were investigated for vertically and laterally stacked devices.
Keywords :
III-V semiconductors; frequency multipliers; indium compounds; millimetre wave diodes; millimetre wave frequency convertors; varactors; 12 V; 12 to 12.3 percent; 250 GHz; InGaAs-InAlAs-AlAs; InP; InP-based HBV triplers; breakdown voltage; capacitance ratio; capacitance-voltage characteristics; harmonic multiplication; heterostructure barrier varactor; highly nonlinear C-V characteristics; laterally stacked devices; nonlinear transmission lines; vertically stacked devices; zero-bias capacitance; Capacitance; Capacitance-voltage characteristics; Coaxial components; Diodes; Electrical resistance measurement; Frequency; Gallium arsenide; Power generation; Varactors; Voltage;
Conference_Titel :
Microwave Symposium Digest, 1999 IEEE MTT-S International
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
0-7803-5135-5
DOI :
10.1109/MWSYM.1999.779439
