Analysis of Si and SiGe integrated optical devices

Author

Pierantoni, L. ; Di Donato, A. ; Rozzi, T.

Author_Institution

Dipt. di Elettronica ed Automatica, Universit degli Studi di Ancona, Italy

fYear

2003

fDate

11-11 April 2003

Firstpage

186

Lastpage

188

Abstract

In this contribution we present the application of hybrid time-domain transmission line matrix-integral equation methods (TLM-IE) to the analysis of Si and SiGe integrated optic components. For many practical configurations, the standard methods of integrated optics, because of their validity condition, are not satisfy. Then a combined TLM-IE can be used to visualize and to understand the electromagnetic field behaviour. In this letter, the simulation results of optical devices are presented. Compared with the pure TLM method the hybrid TLM-IE requires a considerably reduced computational effort.

Keywords

Ge-Si alloys; elemental semiconductors; integral equations; integrated optics; semiconductor materials; silicon; time-domain analysis; transmission line matrix methods; Si; SiGe; electromagnetic field; hybrid time-domain transmission line matrix-integral equation method; integrated optical device; Computational modeling; Electromagnetic fields; Equations; Germanium silicon alloys; Integrated optics; Optical devices; Silicon germanium; Time domain analysis; Transmission line matrix methods; Visualization;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers. 2003 Topical Meeting on

Conference_Location

Grainau, Germany

Print_ISBN

0-7803-7787-7

Type

conf

DOI

10.1109/SMIC.2003.1196701

Filename

1196701