A compact V-band 3DMMIC single-chip down-converter using photosensitive BCB dielectric film

Author

Nishikawa, K. ; Sugitani, S. ; Inoue, K. ; Kamogawa, K. ; Tokumitsu, T. ; Toyoda, I. ; Tanaka, M.

Author_Institution

NTT Wireless Syst. Labs., Yokosuka, Japan

Volume

1

fYear

1999

fDate

13-19 June 1999

Firstpage

131

Abstract

A high-density MMIC V-band down-converter that employs the masterslice 3DMMIC technology and photosensitive BCB dielectric film, is presented. The down-converter is structured using an 8/spl times/2 master array in a 1.84 mm/spl times/0.87 mm chip. A down-converter MMIC with H-MESFET with f/sub max/ of 130 GHz demonstrates the gain of 19.3 dB and image rejection ratio of above 18 dB over the frequency range of 56.5 GHz to 59.5 GHz; its associated gain-density is five times higher than that of conventional MMICs.

Keywords

MESFET integrated circuits; MMIC frequency convertors; dielectric thin films; field effect MIMIC; millimetre wave mixers; 130 GHz; 19.3 dB; 3DMMIC; 56.5 to 59.5 GHz; H-MESFET; V-band; gain-density; image rejection ratio; master array; photosensitive BCB dielectric film; single-chip down-converter; Coupling circuits; Dielectric films; Gain; Indium phosphide; Laboratories; MMICs; Millimeter wave radar; Millimeter wave technology; Polyimides; Wireless LAN;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1999 IEEE MTT-S International

Conference_Location

Anaheim, CA, USA

Print_ISBN

0-7803-5135-5

Type

conf

DOI

10.1109/MWSYM.1999.779441

Filename

779441