Title :
P-type InGaN across entire composition range
Author :
Wang, Kangping ; Katsuki, Takayuki ; Sakaguchi, Jun ; Araki, Takeshi ; Nanishi, Y. ; Yu, K.M. ; Mayer, M.A. ; Alarcon-Llado, E. ; Ager, J.W. ; Walukiewicz, W.
Author_Institution :
Ritsumeikan Univ., Kusatsu, Japan
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
We report a systematic investigation on Mg doped InGaN epilayers grown by plasma-assisted molecular beam epitaxy. Hall effect, thermopower and electrochemical capacitance voltage experiments have been combined to investigate the conduction properties. The results show the realization of p-type InGaN across the entire alloy composition range.
Keywords :
Hall effect; III-V semiconductors; electrochemical analysis; epitaxial layers; gallium compounds; indium compounds; magnesium; molecular beam epitaxial growth; plasma materials processing; wide band gap semiconductors; Hall effect; InGaN:Mg; alloy composition range; electrochemical capacitance voltage; epilayer growth; plasma-assisted molecular beam epitaxy; Charge carrier processes; Gallium nitride; Hall effect; Metals; Molecular beam epitaxial growth; Ocean temperature;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6467800
