Title :
Influence of electron energy distribution in nanocathodes on current-voltage characteristics
Author :
Evtukh, A. ; Grygoriev, A. ; Litovchenko, V. ; Steblova, O. ; Yilmazoglu, Oktay ; Hartnagel, H. ; Mimura, Hidenori
Author_Institution :
V. Lashkaryov Inst. of Semicond. Phys., Kiev, Ukraine
Abstract :
The peculiarities of electron field emission from silicon based multilayer cathodes have been investigated. The structure under study was Si tip coated with SiO2-Si-SiO2 multilayer. The coating was formed by low pressure chemical vapor deposition of silicon enriched SiOx film (d=6.6 nm) and following thermal annealing. The electron distribution in silicon tip (3D) and quantum dot (1D) were taken into account during calculation of emission current. As it was shown the emitted electron energy distribution has two peaks. The emission current-voltage characteristic calculated based on the obtained electron energy distribution is in a good quality agreement with experimental one.
Keywords :
cathodes; chemical vapour deposition; electron field emission; elemental semiconductors; multilayers; nanotechnology; rapid thermal annealing; semiconductor quantum dots; semiconductor thin films; silicon; silicon compounds; SiO2-Si-SiO2; electron energy distribution; electron field emission; emission current-voltage characteristic; low pressure chemical vapor deposition; nanocathodes; quantum dot; silicon based multilayer cathodes; silicon tip; thermal annealing; Anodes; Silicon; electron energy distribution; electron field emission; multilayer structure; nanocathodes; nanoclusters; silicon; silicon oxide;
Conference_Titel :
Vacuum Nanoelectronics Conference (IVNC), 2013 26th International
Conference_Location :
Roanoke, VA
DOI :
10.1109/IVNC.2013.6624758
