DocumentCode
3419491
Title
Analysis of termination impedance effects on the linearity of 5 GHz CMOS radio frequency amplifiers
Author
Fairbanks, J.S. ; Larson, L.E.
Author_Institution
Electr. & Comput. Eng. Dept., California Univ., San Diego, La Jolla, CA, USA
fYear
2003
fDate
11-11 April 2003
Firstpage
196
Lastpage
199
Abstract
The high-frequency nonlinear distortion of a small-signal CMOS common-source amplifier stage is analyzed as a function of bias and termination impedance at 5 GHz. The results developed can be applied to wireless RF circuit design applications.
Keywords
CMOS analogue integrated circuits; nonlinear distortion; radiofrequency amplifiers; radiofrequency integrated circuits; 5 GHz; CMOS radiofrequency amplifier; high-frequency nonlinear distortion; linearity; small-signal common-source stage; termination impedance; wireless circuit design; CMOS technology; Capacitance; Impedance; Linearity; MOSFET circuits; Radio frequency; Radiofrequency amplifiers; Transconductance; Transfer functions; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers. 2003 Topical Meeting on
Conference_Location
Grainau, Germany
Print_ISBN
0-7803-7787-7
Type
conf
DOI
10.1109/SMIC.2003.1196704
Filename
1196704
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