DocumentCode :
3419499
Title :
A wide tuning range high output power 56–74 GHz VCO with on-chip transformer load in SiGe technology
Author :
Nasr, I. ; Laemmle, B. ; Knapp, H. ; Fischer, G. ; Weigel, R. ; Kissinger, D.
Author_Institution :
Inst. for Electron. Eng., Univ. of Erlangen-Nuremberg, Erlangen, Germany
fYear :
2012
fDate :
16-18 Jan. 2012
Firstpage :
49
Lastpage :
52
Abstract :
This paper presents a wide tuning range modified Colpitts VCO with high output power. The circuit was fabricated using a lowcost SiGe technology with an ft/fmax of 170/250 GHz. The VCO can be tuned between 56.4 and 73.8 GHz having a tuning range of ≈ 27%. The maximum measured output power is +9.4 dBm, and the output power remains above +7.0 dBm over the entire tuning range. The VCO has a minimum phase noise of -95 dBc/Hz, which stays below -88 dBc/Hz over the entire tuning range. On-chip frequency dividers were used to enable easier measurement. A single transformer was designed and used simultaneously for output matching of the VCO and as an output balun. The overall chip draws 112 mA from a 3.3 V supply, where the VCO draws 45 mA of the total current.
Keywords :
Ge-Si alloys; baluns; frequency dividers; transformers; voltage-controlled oscillators; Colpitts VCO; SiGe; SiGe technology; current 112 mA; current 45 mA; frequency 56 GHz to 74 GHz; on-chip frequency divider; on-chip transformer load; output balun; output matching; voltage 3.3 V; Frequency conversion; Frequency measurement; Phase noise; Power generation; Silicon germanium; Tuning; Voltage-controlled oscillators; Colpitts; FMCW; Frequency Dividers; Transformer; VCO;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2012 IEEE 12th Topical Meeting on
Conference_Location :
Santa Clara, CA
Print_ISBN :
978-1-4577-1317-0
Type :
conf
DOI :
10.1109/SiRF.2012.6160130
Filename :
6160130
Link To Document :
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