• DocumentCode
    3419499
  • Title

    A wide tuning range high output power 56–74 GHz VCO with on-chip transformer load in SiGe technology

  • Author

    Nasr, I. ; Laemmle, B. ; Knapp, H. ; Fischer, G. ; Weigel, R. ; Kissinger, D.

  • Author_Institution
    Inst. for Electron. Eng., Univ. of Erlangen-Nuremberg, Erlangen, Germany
  • fYear
    2012
  • fDate
    16-18 Jan. 2012
  • Firstpage
    49
  • Lastpage
    52
  • Abstract
    This paper presents a wide tuning range modified Colpitts VCO with high output power. The circuit was fabricated using a lowcost SiGe technology with an ft/fmax of 170/250 GHz. The VCO can be tuned between 56.4 and 73.8 GHz having a tuning range of ≈ 27%. The maximum measured output power is +9.4 dBm, and the output power remains above +7.0 dBm over the entire tuning range. The VCO has a minimum phase noise of -95 dBc/Hz, which stays below -88 dBc/Hz over the entire tuning range. On-chip frequency dividers were used to enable easier measurement. A single transformer was designed and used simultaneously for output matching of the VCO and as an output balun. The overall chip draws 112 mA from a 3.3 V supply, where the VCO draws 45 mA of the total current.
  • Keywords
    Ge-Si alloys; baluns; frequency dividers; transformers; voltage-controlled oscillators; Colpitts VCO; SiGe; SiGe technology; current 112 mA; current 45 mA; frequency 56 GHz to 74 GHz; on-chip frequency divider; on-chip transformer load; output balun; output matching; voltage 3.3 V; Frequency conversion; Frequency measurement; Phase noise; Power generation; Silicon germanium; Tuning; Voltage-controlled oscillators; Colpitts; FMCW; Frequency Dividers; Transformer; VCO;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2012 IEEE 12th Topical Meeting on
  • Conference_Location
    Santa Clara, CA
  • Print_ISBN
    978-1-4577-1317-0
  • Type

    conf

  • DOI
    10.1109/SiRF.2012.6160130
  • Filename
    6160130