DocumentCode :
3419517
Title :
AlGaN/GaN HEMTs with thermal oxidation treatment for microwave power applications
Author :
Di Meng ; Shenghou Liu ; Shuxun Lin ; Wen, Cheng P. ; Jinyan Wang ; Yilong Hao ; Wengang Wu
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
fYear :
2012
fDate :
Oct. 29 2012-Nov. 1 2012
Firstpage :
1
Lastpage :
3
Abstract :
AlGaN/GaN high electron mobility transistors (HEMTs) with thermal oxidation treatment (TOT) are found to exhibit very low gate leakage current (10-7A/mm of gate periphery up to -20 V applied reverse gate bias) and high maximum extrinsic transconductance (180 mS/mm). The two-dimensional electron gas concentration increased obviously after the oxidation treatment. A current gain cutoff frequency (fT) of 36 GHz and a maximum oscillation frequency (fMAX) of 60 GHz are deduced from S-parameter measurements for transistors with a gate length of 0.4 μm. The high performance TOT AlGaN/GaN HEMTs are highly promising for microwave power amplifier applications in radar and communication systems.
Keywords :
III-V semiconductors; S-parameters; aluminium compounds; gallium compounds; high electron mobility transistors; leakage currents; microwave power amplifiers; oxidation; two-dimensional electron gas; wide band gap semiconductors; 2D electron gas concentration; AlGaN-GaN; HEMT; S-parameter measurements; TOT; frequency 36 GHz; frequency 60 GHz; gate leakage current; high electron mobility transistors; maximum extrinsic transconductance; microwave power amplifier; size 0.4 mum; thermal oxidation treatment; Aluminum gallium nitride; Gallium nitride; HEMTs; Leakage current; Logic gates; MODFETs; Oxidation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
Type :
conf
DOI :
10.1109/ICSICT.2012.6467803
Filename :
6467803
Link To Document :
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