DocumentCode
3419534
Title
An 18Ghz LNA Ga FET high gain amplifier for WLAN
Author
Habibzadeh, Alireza ; Moghaddasi, Mohamad Naser ; Jalali, Mahdi
Author_Institution
Dept. of Electr. Eng., IAU, Urmia, Iran
fYear
2009
fDate
15-17 Nov. 2009
Firstpage
1
Lastpage
3
Abstract
In this article we design a novel ka band low noise amplifier with high stability. in this design Ga FET used to high gain and low noise figure and conditional and unconditional stability. We applied a low noise cost solution for various Ka band receivers such as P-to-P radio, WLAN and UWB sensors. Finally circuit layout with ADS software is presented and very low noise figure about 1.3 dB and about 16 dB gain was taken.
Keywords
HF amplifiers; field effect transistors; gallium; low noise amplifiers; ultra wideband communication; wireless LAN; FET high gain amplifier; Ga; P-to-P radio; UWB sensors; WLAN; frequency 18 GHz; ka band low noise amplifier; noise figure; Circuit noise; Circuit stability; Frequency; Gallium arsenide; HEMTs; Low-noise amplifiers; MODFETs; Microwave FETs; Noise figure; Wireless LAN; ADS software; Ga FET; LNA; Super Low noise HEMT(High Electron Mobility Transistor);
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium (MMS), 2009 Mediterrannean
Conference_Location
Tangiers
Print_ISBN
978-1-4244-4664-3
Electronic_ISBN
978-1-4244-4665-0
Type
conf
DOI
10.1109/MMS.2009.5409824
Filename
5409824
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