DocumentCode :
3419552
Title :
A 64 to 81 GHz PLL with low phase noise in an 80 GHz SiGe HBT technology
Author :
Liu, Gang ; Trasser, Andreas ; Schumacher, Hermann
Author_Institution :
Inst. of Electron Devices & Circuits, Ulm Univ., Ulm, Germany
fYear :
2012
fDate :
16-18 Jan. 2012
Firstpage :
171
Lastpage :
174
Abstract :
This paper presents a 64 to 81 GHz PLL realized in a low-cost, 80 GHz HBT technology. The circuit consists of a wide tuning range VCO, a push-push frequency doubler and an analog PLL (divide by 32 frequency divider, phase detector and active loop filter) for phase locking. The measured phase noise is -106 dB/Hz at 1 MHz offset. Output power is -2.5 dBm at 64 GHz and slowly decreases to -6 dBm at 81 GHz. DC power consumption is 431 mW. The circuit achieves the widest frequency tuning range and lowest phase noise among the reported PLLs in a similar frequency range.
Keywords :
active filters; circuit tuning; frequency dividers; frequency multipliers; heterojunction bipolar transistors; phase detectors; phase locked loops; phase noise; power consumption; voltage-controlled oscillators; DC power consumption; HBT technology; VCO; active loop filter; analog PLL; frequency 64 GHz to 81 GHz; frequency 80 GHz; frequency divider; frequency range; frequency tuning range; low phase noise; output power; phase detector; phase locking; power 431 mW; push-push frequency doubler; wide tuning range; Detectors; Frequency conversion; Phase locked loops; Phase noise; Silicon germanium; Tuning; Voltage-controlled oscillators; Voltage-controlled oscillators; heterojunction-bipolar-transistors; phase locked loops;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2012 IEEE 12th Topical Meeting on
Conference_Location :
Santa Clara, CA
Print_ISBN :
978-1-4577-1317-0
Type :
conf
DOI :
10.1109/SiRF.2012.6160133
Filename :
6160133
Link To Document :
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