94 and 150 GHz coplanar waveguide MMIC amplifiers realized using InP technology

Author

Edgar, D.L. ; McLelland, H. ; Ferguson, S. ; Cameron, N.I. ; Holland, M. ; Thayne, I.G. ; Taylor, M.R.S. ; Stanley, C.R. ; Beaumont, S.P.

Author_Institution

Dept. of Electron. & Electr. Eng., Glasgow Univ., UK

Volume

1

fYear

1999

fDate

13-19 June 1999

Firstpage

247

Abstract

We report the design, fabrication and measurement of a three stage W-band amplifier with up to 22 dB gain at 94 GHz and a single stage D-band amplifier with 5 dB gain at 150 GHz. Circuits were designed and fabricated in coplanar waveguide technology using a 0.121 /spl mu/m T-gate lattice matched InP HEMT technology.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; coplanar waveguide components; field effect MIMIC; indium compounds; integrated circuit design; millimetre wave amplifiers; 0.12 micron; 150 GHz; 22 dB; 5 dB; 94 GHz; CPW MMIC amplifiers; CPW technology; EHF; InP; InP technology; MIMIC; MM-wave ICs; T-gate HEMT technology; coplanar waveguide; fabrication; lattice matched InP; single stage D-band amplifier; three stage W-band amplifier; Coplanar waveguides; Equivalent circuits; Fabrication; HEMTs; Indium phosphide; Integrated circuit technology; Lattices; MMICs; Millimeter wave technology; Semiconductor device modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1999 IEEE MTT-S International

Conference_Location

Anaheim, CA, USA

Print_ISBN

0-7803-5135-5

Type

conf

DOI

10.1109/MWSYM.1999.779467

Filename

779467