Cathodoluminescence properties of silicon thin films crystallized by electron beam exposure

Author

Seon Yong Park ; Su Woong Lee ; Jung Soo Kang ; Ha Rim Lee ; Mi Yeon Joo ; Jin Kyo Kim ; Kyu Chang Park

Author_Institution

Dept. of Inf. Display & Adv. Display Center, Kyung Hee Univ., Seoul, South Korea

fYear

2013

fDate

8-12 July 2013

Firstpage

1

Lastpage

2

Abstract

In this study, we investigated cathodoluminescence properties from silicon thin film after electron beam exposure on amorphous silicon film. The emission spectrum shows broad distribution in the visible region. Raman spectroscopy and SEM measurement shows that the area exposed by E-beam is crystallized. However the intensities of CL spectra of a-Si weakly appeared at 500 ~ 800 nm. The origin of CL spectrum from the silicon film exposed by E-beam will be discussed.

Keywords

Raman spectra; amorphous semiconductors; cathodoluminescence; crystallisation; electron beam effects; elemental semiconductors; scanning electron microscopy; semiconductor thin films; silicon; E-beam; Raman spectroscopy; SEM measurement; Si; amorphous silicon films; cathodoluminescence spectral intensity; electron beam exposure; emission spectrum; silicon thin film crystallization; visible region; wavelength 500 nm to 800 nm; Educational institutions; Materials; Welding; CL; E-beam; Raman; SEM; crystallization; silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Nanoelectronics Conference (IVNC), 2013 26th International

Conference_Location

Roanoke, VA

Type

conf

DOI

10.1109/IVNC.2013.6624766

Filename

6624766