Multi-cell circuit model for thyristor-type devices using quasi 2-dimensional lumped-charge method

A new physics based circuit-simulation model for thyristor-type devices such as GTO, IGCT or MTO is proposed. In contrast to other models, this model not only simulates 1-dimensional effects but also accounts for current spreading inside each cell and between cells. Single-cell behavior is modeled using a quasi 2-dimensional lumped-charge approach. Several single cell models are connected in parallel with linear passive elements (i.e. resistors and inductors) to model the complete wafer. The model is implemented in the circuit-simulator PSpice using the Device Equation option. Simulation results are compared to measurements.