Title :
F — Band injection locked tripler based on Colpitts oscillator
Author :
Vishnipolsky, Amit ; Socher, Eran
Author_Institution :
Sch. of Electr. Eng., Tel-Aviv Univ., Tel Aviv, Israel
Abstract :
This paper presents an F band injection locked frequency tripler (ILFT). The ILFT is based on transformer coupling into the resonator of differential Colpitts oscillator. The locking range of the Tripler is between 90 to 115 GHz thus achieving 24.5% locking range. Transformers are used to couple the signals in and out of the ILFT, without additional power consuming buffers. The ILFT was implemented in 90 nm CMOS process, with a maximum power consumption of the circuit is 17 mW and area of 0.284 mm2 including bond pads.
Keywords :
CMOS integrated circuits; field effect MIMIC; frequency multipliers; injection locked oscillators; low-power electronics; millimetre wave oscillators; transformers; CMOS process; F-band injection locked frequency tripler; ILFT; differential Colpitts oscillator; frequency 90 GHz to 115 GHz; power 17 mW; power consumption; size 90 nm; transformer coupling; CMOS integrated circuits; Phase noise; Radiofrequency integrated circuits; Transistors; Tuning; Voltage-controlled oscillators; CMOS; F-band; ILFT; Injection lock; Tripler; W-band; mm-Wave;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2012 IEEE 12th Topical Meeting on
Conference_Location :
Santa Clara, CA
Print_ISBN :
978-1-4577-1317-0
DOI :
10.1109/SiRF.2012.6160143
