DocumentCode :
3419809
Title :
High performance RF inductors integrated in advanced Fan-Out wafer level packaging technology
Author :
Durand, Cedric ; Gianesello, Frederic ; Pilard, Romain ; Gloria, Daniel ; Imbs, Yvon ; Coffy, Romain ; Marechal, Laurent ; Jin, Yonggang ; Dodo, Yves
Author_Institution :
STMicroelectron., Technol. R&D, Crolles, France
fYear :
2012
fDate :
16-18 Jan. 2012
Firstpage :
215
Lastpage :
218
Abstract :
This paper aims to make a full evaluation of inductor performances integrated in multi layer FO-WLP technology. Technology interest for radio frequency passives is first discussed. The inductor offer, composed of four different inductor families, is described including more than 200 different inductors that were fabricated. Measurements exhibit promising quality factors for such packaging technology, with Q>;50 for a 1.1nH inductor. Comparison with inductors integrated in CMOS demonstrates a 2.4 times quality factor improvement in favor of FO-WLP while the global size is nearly identical. FO-WLP technology has then to be considered as a very promising technology for the integration of high quality passive in CMOS.
Keywords :
CMOS integrated circuits; Q-factor; inductors; wafer level packaging; CMOS; RF inductor; fan-out wafer level packaging technology; multilayer FO-WLP technology; quality factor; radio frequency passives; Coils; Inductors; Performance evaluation; Q factor; Radio frequency; Silicon; Three dimensional displays; BGA; CMOS integrated inductors; FO-WLP; Fan-in; Fan-out; Inductors; RF passives; eWLB;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2012 IEEE 12th Topical Meeting on
Conference_Location :
Santa Clara, CA
Print_ISBN :
978-1-4577-1317-0
Type :
conf
DOI :
10.1109/SiRF.2012.6160146
Filename :
6160146
Link To Document :
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