High sensitivity detector with robust PVT performance for 60GHz BiST phased array systems in 90nm CMOS

Author

Cohen, Emanuel ; Israel, Amichay ; Degani, Ofir ; Ritter, Dan

Author_Institution

Mobile Wireless Group, Intel Haifa, Haifa, Israel

fYear

2012

fDate

16-18 Jan. 2012

Firstpage

211

Lastpage

214

Abstract

A built in self test (BiST) system for a 60GHz phased array chip with high sensitivity large dynamic range detectors is presented. The system measures the array phase shifter relative step with an accuracy of 5deg and the gain of the TX and RX chain through loopback with an accuracy of +/-1dB across process, temperature, and voltage (PVT). The system is composed of an RF combining detector path between chains with switched coupling, low noise detectors based on self mixing, and bias circuits that compensate for temperature and process variation. The Detector off state load on the PA output is 0.2dB.

Keywords

CMOS analogue integrated circuits; built-in self test; field effect MIMIC; integrated circuit testing; millimetre wave amplifiers; millimetre wave detectors; phase shifters; power amplifiers; BiST phased array systems; PA; RF combining detector; built in self test system; frequency 60 GHz; high sensitivity detector; low noise detectors; phase array shifter; phased array chip; robust PVT performance; size 90 nm; switched coupling; Arrays; Couplings; Detectors; Noise; Sensitivity; Temperature measurement; Temperature sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2012 IEEE 12th Topical Meeting on

Conference_Location

Santa Clara, CA

Print_ISBN

978-1-4577-1317-0

Type

conf

DOI

10.1109/SiRF.2012.6160149

Filename

6160149