A new method to analyze the behavior of SiGe:C HBTs under RF large signal stress

Author

Wipf, Christian

Author_Institution

IHP, Frankfurt (Oder), Germany

fYear

2012

fDate

16-18 Jan. 2012

Firstpage

97

Lastpage

100

Abstract

An integrated oscillator was designed to analyze the behavior of high-performance SiGe:C HBTs under RF large signal stress. The properties of the oscillator core HBTs can easily be monitored during the whole test period. A complex measurement setup was arranged to perform all tests without the need to reconfigure the measurement setup. First experimental data are presented demonstrating a degradation of the HBT 1/f noise and base current behavior caused by the applied RF large signal stress.

Keywords

1/f noise; Ge-Si alloys; carbon; heterojunction bipolar transistors; radiofrequency oscillators; semiconductor doping; silicon compounds; HBT 1/f noise; RF large signal stress; SiGe:C; base current behavior; complex measurement setup; integrated oscillator; oscillator core HBT; Current measurement; Frequency measurement; Heterojunction bipolar transistors; Noise; Oscillators; Radio frequency; Stress; 1/f noise; RF Large Signal Stress; RF circuits; Silicon bipolar/BiCMOS process technology; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2012 IEEE 12th Topical Meeting on

Conference_Location

Santa Clara, CA

Print_ISBN

978-1-4577-1317-0

Type

conf

DOI

10.1109/SiRF.2012.6160152

Filename

6160152