DocumentCode
341998
Title
Fully monolithic 4 watt high efficiency Ka-band power amplifier
Author
Komiak, J.J. ; Kong, W. ; Chao, P.C. ; Nichols, K.
Author_Institution
Sanders Associates Inc., Nashua, NH, USA
Volume
3
fYear
1999
fDate
13-19 June 1999
Firstpage
947
Abstract
Design and performance of a power amplifier that has established a new benchmark for Ka-band power is reported. The amplifier achieved >4 Watts at 25 to 31% PAE with 14 dB of power gain from 29 to 31 GHz. This output power, bandwidth, and efficiency is superior to the best previously reported results. The amplifier is implemented in an improved fully selective 0.15 um power PHEMT process.
Keywords
HEMT integrated circuits; MMIC power amplifiers; integrated circuit design; microwave power amplifiers; 0.15 micron; 14 dB; 25 to 31 percent; 29 to 31 GHz; 4 W; Ka-band; MMIC amplifiers; PAE; efficiency; power PHEMT process; power amplifier; power gain; Feeds; Fingers; High power amplifiers; MIM capacitors; MMICs; PHEMTs; Power amplifiers; RLC circuits; Resistors; Signal design;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1999 IEEE MTT-S International
Conference_Location
Anaheim, CA, USA
Print_ISBN
0-7803-5135-5
Type
conf
DOI
10.1109/MWSYM.1999.779542
Filename
779542
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