Title :
A high power broadband monolithic power amplifier for Ka-band ground terminals
Author :
Siddiqui, M.K. ; Sharma, A.K. ; Callejo, L.G. ; Lai, R.
Author_Institution :
Space & Electron. Group, TRW Inc., Redondo Beach, CA, USA
Abstract :
A high power broadband monolithic power amplifier operating from 29 to 32 GHz is presented for Ka-band ground terminal applications. Using 0.15 /spl mu/m InGaAs/AlGaAs/GaAs pseudomorphic HEMT (PHEMT) devices, the two stage power amplifier on 4 mil GaAs substrate demonstrated greater than 16 dB small signal gain and 32 dBm (1.6 watts) power. The amplifier attained peak output power of 33 dBm (2 watts) and power added-efficiency of 27%. At this power level, the amplifier exhibited power densities in excess of 620 mW/mm. Performance capabilities of the HEMT power amplifiers at millimeter-wave frequencies is documented in terms of power densities at 1 dB compression and at saturation, as well as power-added efficiency.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; aluminium compounds; gallium arsenide; indium compounds; millimetre wave power amplifiers; satellite ground stations; wideband amplifiers; 0.15 micron; 1.6 to 2 W; 27 percent; 29 to 32 GHz; 4 mil; InGaAs-AlGaAs-GaAs; Ka-band; broadband monolithic power amplifier; ground terminals; millimeter-wave frequencies; peak output power; power added-efficiency; power densities; power-added efficiency; pseudomorphic HEMT; small signal gain; two stage power amplifier; Broadband amplifiers; Frequency; Gain; Gallium arsenide; HEMTs; High power amplifiers; Indium gallium arsenide; PHEMTs; Power amplifiers; Power generation;
Conference_Titel :
Microwave Symposium Digest, 1999 IEEE MTT-S International
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
0-7803-5135-5
DOI :
10.1109/MWSYM.1999.779543
