Title :
Performance of coplanar interconnects for millimeter-wave applications
Author :
Islam, Rownak ; Henderson, Rashaunda M.
Author_Institution :
Univ. of Texas at Dallas, Richardson, TX, USA
Abstract :
The attenuation constant of interconnects fabricated in foundry and post-CMOS processing are compared up to 110 GHz. Two dielectric materials with thicknesses less than 10 microns are deposited on a lossy silicon (Si) substrate. The interlayer dielectric (ILD) from 180 nm TSMC and benzocylobutene (BCB) are used to characterize losses measured on coplanar waveguide (CPW) and grounded CPW (GCPW) at millimeter-wave (mm-wave) frequencies. CPW lines on BCB have comparable or better loss performance compared to the foundry GCPW lines at 100 GHz.
Keywords :
CMOS integrated circuits; coplanar transmission lines; coplanar waveguide components; dielectric materials; integrated circuit interconnections; millimetre wave integrated circuits; silicon; Si; TSMC; attenuation constant; benzocylobutene; coplanar interconnects; coplanar waveguide; dielectric material; foundry GCPW lines; frequency 100 GHz; grounded CPW; interlayer dielectric; lossy silicon substrate; millimeter-wave application; millimeter-wave frequency; mm-wave frequencies; post-CMOS processing; size 180 nm; Attenuation; CMOS integrated circuits; Coplanar waveguides; Dielectrics; Integrated circuit interconnections; Silicon; Substrates; Attenuation constant; BCB; CMOS; CPW; GCPW; ILD; mm-wave;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2012 IEEE 12th Topical Meeting on
Conference_Location :
Santa Clara, CA
Print_ISBN :
978-1-4577-1317-0
DOI :
10.1109/SiRF.2012.6160160
