Performance of coplanar interconnects for millimeter-wave applications

Author

Islam, Rownak ; Henderson, Rashaunda M.

Author_Institution

Univ. of Texas at Dallas, Richardson, TX, USA

fYear

2012

fDate

16-18 Jan. 2012

Firstpage

117

Lastpage

120

Abstract

The attenuation constant of interconnects fabricated in foundry and post-CMOS processing are compared up to 110 GHz. Two dielectric materials with thicknesses less than 10 microns are deposited on a lossy silicon (Si) substrate. The interlayer dielectric (ILD) from 180 nm TSMC and benzocylobutene (BCB) are used to characterize losses measured on coplanar waveguide (CPW) and grounded CPW (GCPW) at millimeter-wave (mm-wave) frequencies. CPW lines on BCB have comparable or better loss performance compared to the foundry GCPW lines at 100 GHz.

Keywords

CMOS integrated circuits; coplanar transmission lines; coplanar waveguide components; dielectric materials; integrated circuit interconnections; millimetre wave integrated circuits; silicon; Si; TSMC; attenuation constant; benzocylobutene; coplanar interconnects; coplanar waveguide; dielectric material; foundry GCPW lines; frequency 100 GHz; grounded CPW; interlayer dielectric; lossy silicon substrate; millimeter-wave application; millimeter-wave frequency; mm-wave frequencies; post-CMOS processing; size 180 nm; Attenuation; CMOS integrated circuits; Coplanar waveguides; Dielectrics; Integrated circuit interconnections; Silicon; Substrates; Attenuation constant; BCB; CMOS; CPW; GCPW; ILD; mm-wave;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2012 IEEE 12th Topical Meeting on

Conference_Location

Santa Clara, CA

Print_ISBN

978-1-4577-1317-0

Type

conf

DOI

10.1109/SiRF.2012.6160160

Filename

6160160