DocumentCode
3420159
Title
Impact of high frequency correlated noise on SiGe HBT low noise amplifier design
Author
Shen, Pei ; Niu, Guofu ; Xu, Ziyan ; Zhang, Wanrong
Author_Institution
Electr. & Comput. Eng. Dept., Auburn Univ., Auburn, AL, USA
fYear
2012
fDate
16-18 Jan. 2012
Firstpage
125
Lastpage
128
Abstract
This paper investigates the impact of high frequency noise correlation on SiGe HBT LNA design. With correlation, simultaneous noise and impedance match is found to continue to hold approximately. However, a larger size and hence a higher biasing current are required for noise matching. The actual noise figure (NF) of LNAs designed without considering noise correlation is also investigated. Further investigation shows that a size considerably smaller than noise matching size is more preferable, as it produces high gain, high linearity and NF only slightly higher noise figure at much smaller power consumption.
Keywords
Ge-Si alloys; heterojunction bipolar transistors; impedance matching; low noise amplifiers; HBT LNA design; HBT low noise amplifier design; NF; SiGe; biasing current; high frequency noise correlation; impedance matching; noise figure; power consumption; Impedance matching; Integrated circuit modeling; Noise; Noise measurement; Optimized production technology; SPICE; Transistors; Cascode LNA; emitter length; high frequency noise correlation; noise figure;
fLanguage
English
Publisher
ieee
Conference_Titel
Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2012 IEEE 12th Topical Meeting on
Conference_Location
Santa Clara, CA
Print_ISBN
978-1-4577-1317-0
Type
conf
DOI
10.1109/SiRF.2012.6160163
Filename
6160163
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