• DocumentCode
    3420159
  • Title

    Impact of high frequency correlated noise on SiGe HBT low noise amplifier design

  • Author

    Shen, Pei ; Niu, Guofu ; Xu, Ziyan ; Zhang, Wanrong

  • Author_Institution
    Electr. & Comput. Eng. Dept., Auburn Univ., Auburn, AL, USA
  • fYear
    2012
  • fDate
    16-18 Jan. 2012
  • Firstpage
    125
  • Lastpage
    128
  • Abstract
    This paper investigates the impact of high frequency noise correlation on SiGe HBT LNA design. With correlation, simultaneous noise and impedance match is found to continue to hold approximately. However, a larger size and hence a higher biasing current are required for noise matching. The actual noise figure (NF) of LNAs designed without considering noise correlation is also investigated. Further investigation shows that a size considerably smaller than noise matching size is more preferable, as it produces high gain, high linearity and NF only slightly higher noise figure at much smaller power consumption.
  • Keywords
    Ge-Si alloys; heterojunction bipolar transistors; impedance matching; low noise amplifiers; HBT LNA design; HBT low noise amplifier design; NF; SiGe; biasing current; high frequency noise correlation; impedance matching; noise figure; power consumption; Impedance matching; Integrated circuit modeling; Noise; Noise measurement; Optimized production technology; SPICE; Transistors; Cascode LNA; emitter length; high frequency noise correlation; noise figure;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2012 IEEE 12th Topical Meeting on
  • Conference_Location
    Santa Clara, CA
  • Print_ISBN
    978-1-4577-1317-0
  • Type

    conf

  • DOI
    10.1109/SiRF.2012.6160163
  • Filename
    6160163