Title :
The evolution of the HfSiOx/Si interface along with the increase of forming gas annealing temperature
Author :
Wen Yang ; Yang Geng ; Run-chen Fang ; Qing-Qing Sun ; Hong-Liang Lu ; Peng Zhou ; Zhang, David Wei
Author_Institution :
Dept. of Microelectron., Fudan Univ., Shanghai, China
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
Hafnium silicate-based Metal Oxide Semiconductor (MOS) capacitors were fabricated by atomic layer deposition. The interface evolution of the films with forming gas annealing was investigated. It is found that most of the slow interface states were passivated through Forming Gas Annealing (FGA), and the Dit in the center of the band gap was estimated to be 2.3×1011 eV-1cm-2. It is also found that interface layer can react with HfO2 to form HfSiOx in the process of FGA at elevated temperature, and the interface thickness was reduced to 0.4 nm after FGA at 600°C.
Keywords :
MOS capacitors; annealing; atomic layer deposition; elemental semiconductors; hafnium compounds; passivation; silicon; thin film capacitors; FGA; HfSiOx-Si; MOS capacitor; atomic layer deposition; band gap estimation; forming gas annealing temperature; metal oxide semiconductor capacitor; passivation; size 0.4 nm; slow interface state; temperature 600 degC; Annealing; Capacitance-voltage characteristics; Dielectrics; Films; Hafnium compounds; Silicon; Dit; FGA; hafnium silicate;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6467832
