Future technologies for commercial and defense telecommunication electronics

Author

Oki, A.K. ; Streit, D.C. ; Lai, R. ; Kobayashi, K.W. ; Gutierrez-Aitken, A. ; Block, T.

Author_Institution

Space & Electron. Group, TRW Inc., Redondo Beach, CA, USA

Volume

3

fYear

1999

fDate

13-19 June 1999

Firstpage

1069

Abstract

Over the past decade there has been a tremendous shift in the microwave and millimeter wave industry from space and defense applications to the rapidly expanding commercial telecommunications market. The gallium arsenide based MESFET, PHEMT, and HBT technologies have found numerous applications in the wireless cellular handset, mmW LMDS, and fiber-optic telecom areas. First we will discuss the contention that traditional space and defense companies are best positioned to develop the next generation technologies required for leadership in these markets. Secondly we will discuss the advantages of indium phosphide based technologies to next-generation commercial telecommunication products.

Keywords

HEMT integrated circuits; MESFET integrated circuits; MIMIC; MMIC; cellular radio; heterojunction bipolar transistors; microwave links; military communication; optical fibre communication; personal communication networks; HBT; LMDS; MESFET; PHEMT; commercial telecommunication electronics; defense telecommunication electronics; fiber-optic telecom; microwave industry; millimeter wave industry; next-generation products; wireless cellular handset; Aerospace industry; Communication industry; Defense industry; Gallium arsenide; Heterojunction bipolar transistors; MESFETs; Millimeter wave communication; Millimeter wave technology; PHEMTs; Space technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1999 IEEE MTT-S International

Conference_Location

Anaheim, CA, USA

Print_ISBN

0-7803-5135-5

Type

conf

DOI

10.1109/MWSYM.1999.779572

Filename

779572