Half-Terahertz SiGe BiCMOS technology

Author

Rücker, H. ; Heinemann, B. ; Fox, A.

Author_Institution

IHP, Frankfurt (Oder), Germany

fYear

2012

fDate

16-18 Jan. 2012

Firstpage

133

Lastpage

136

Abstract

This paper addresses the integration of a new generation of high-speed SiGe HBTs with f_T/ f_max of 300/500 GHz and minimum CML ring oscillator gate delays of 2.0 ps in a 0.13 μm BiCMOS technology. Technological measures for improving the speed of the HBTs compared to our first 0.13 μm BiCMOS generation are discussed. These include scaling of lateral device dimensions and doping profiles as well as a reduced thermal budget and reduced salicide resistance.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; doping profiles; heterojunction bipolar transistors; millimetre wave integrated circuits; SiGe; doping profiles; frequency 300 GHz; frequency 500 GHz; half-terahertz BiCMOS technology; heterojunction bipolar transistors; high-speed HBT; lateral device dimensions; salicide resistance reduction; size 0.13 mum; thermal budget reduction; time 2.0 ps; BiCMOS integrated circuits; Delay; Heterojunction bipolar transistors; Logic gates; Resistance; Ring oscillators; Silicon germanium; Heterojunction bipolar transistors; millimeter wave devices; silicon alloys; silicon bipolar/BiCMOS technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2012 IEEE 12th Topical Meeting on

Conference_Location

Santa Clara, CA

Print_ISBN

978-1-4577-1317-0

Type

conf

DOI

10.1109/SiRF.2012.6160164

Filename

6160164