Title :
Half-Terahertz SiGe BiCMOS technology
Author :
Rücker, H. ; Heinemann, B. ; Fox, A.
Author_Institution :
IHP, Frankfurt (Oder), Germany
Abstract :
This paper addresses the integration of a new generation of high-speed SiGe HBTs with fT/ fmax of 300/500 GHz and minimum CML ring oscillator gate delays of 2.0 ps in a 0.13 μm BiCMOS technology. Technological measures for improving the speed of the HBTs compared to our first 0.13 μm BiCMOS generation are discussed. These include scaling of lateral device dimensions and doping profiles as well as a reduced thermal budget and reduced salicide resistance.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; doping profiles; heterojunction bipolar transistors; millimetre wave integrated circuits; SiGe; doping profiles; frequency 300 GHz; frequency 500 GHz; half-terahertz BiCMOS technology; heterojunction bipolar transistors; high-speed HBT; lateral device dimensions; salicide resistance reduction; size 0.13 mum; thermal budget reduction; time 2.0 ps; BiCMOS integrated circuits; Delay; Heterojunction bipolar transistors; Logic gates; Resistance; Ring oscillators; Silicon germanium; Heterojunction bipolar transistors; millimeter wave devices; silicon alloys; silicon bipolar/BiCMOS technology;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2012 IEEE 12th Topical Meeting on
Conference_Location :
Santa Clara, CA
Print_ISBN :
978-1-4577-1317-0
DOI :
10.1109/SiRF.2012.6160164
