DocumentCode
342020
Title
A 150 W E-mode GaAs power FET with 35% PAE for W-CDMA base station
Author
Tateno, Y. ; Takahashi, H. ; Igarashi, T. ; Fukaya, J.
Volume
3
fYear
1999
fDate
13-19 June 1999
Firstpage
1087
Abstract
A 150 W power FET for W-CDMA base stations has been developed. This FET combines four enhancement-mode (E-mode) 40 W FET chips newly developed and implemented in a package in a push-pull configuration. A saturation power of 51.8 dBm (150 W) and an associated 12 dB linear gain were achieved with this device at 2.2 GHz. A third order intermodulation distortion (IM3) obtained at the average output power of 47 dBm was as small as -36 dBc, providing a power added efficiency (PAE) of 35%.
Keywords
III-V semiconductors; UHF field effect transistors; code division multiple access; gallium arsenide; power field effect transistors; radio equipment; 12 dB; 150 W; 2.2 GHz; 35 percent; E-mode GaAs power FET; GaAs; W-CDMA base station; linear gain; power added efficiency; push-pull configuration; saturation power; third order intermodulation distortion; Base stations; FETs; Frequency; Gallium arsenide; High power amplifiers; Impedance; Intermodulation distortion; Multiaccess communication; Power generation; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1999 IEEE MTT-S International
Conference_Location
Anaheim, CA, USA
Print_ISBN
0-7803-5135-5
Type
conf
DOI
10.1109/MWSYM.1999.779576
Filename
779576
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