DocumentCode
3420344
Title
SiGe HBT compact modeling for production-type circuit design
Author
Schroter, M. ; Chaudhry, S. ; Zheng, J. ; Mukherjee, A. ; Pawlak, A. ; Lehmann, S.
Author_Institution
Dept. of Electron Devices & Integr. Circ., Tech. Univ. Dresden, Dresden, Germany
fYear
2012
fDate
16-18 Jan. 2012
Firstpage
129
Lastpage
132
Abstract
The BJT/HBT compact transistor model HICUM has been used for may years in the industry for production-type circuit design. This paper presents the basic operating principles of the model in a nutshell and then provides a concise overview on its availability in foundry process design kits and corresponding product applications.
Keywords
Ge-Si alloys; foundries; heterojunction bipolar transistors; integrated circuit design; process design; semiconductor device models; semiconductor industry; BJT-HBT compact transistor model; HICUM; SiGe HBT compact modeling; basic operating principles; foundry process design kits; production-type circuit design; Foundries; Geometry; Heterojunction bipolar transistors; Integrated circuit modeling; Silicon germanium; HICUM; SiGe heterojunction bipolar transistors; compact transistor modeling; device modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2012 IEEE 12th Topical Meeting on
Conference_Location
Santa Clara, CA
Print_ISBN
978-1-4577-1317-0
Type
conf
DOI
10.1109/SiRF.2012.6160171
Filename
6160171
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