Film bulk acoustic resonator at 4.4 GHz with ultra low temperature coefficient of resonant frequency

Author

Yu, Hongyu ; Pang, Wei ; Hao Zhang ; Kim, Eun Sok

Author_Institution

Dept. of Electr. Eng.-Electrophys., Univ. of Southern California, Los Angeles, CA, USA

fYear

2005

fDate

30 Jan.-3 Feb. 2005

Firstpage

28

Lastpage

31

Abstract

This paper describes a temperature compensated film bulk acoustic resonator (FBAR) with temperature coefficient of resonant frequency (TCF) of -0.45 ppm/°C (between 85 and 110°C) at 4.4 GHz. The FBAR is composed of Al/ZnO/Al/SiO₂ on a surface micromachined cantilever that is released by XeF₂ vapor etching. Residual stress and material temperature parameters have been incorporated into simulations for optimal design of a temperature compensated FBAR.

Keywords

acoustic resonators; aluminium; micromechanical resonators; silicon compounds; xenon compounds; zinc compounds; 4.4 GHz; 85 to 110 C; Al-ZnO-Al-SiO₂; film bulk acoustic resonator; material temperature parameters; residual stress; resonant frequency; surface micromachined cantilever; ultra low temperature coefficient; vapor etching; Band pass filters; Capacitors; Ceramics; Film bulk acoustic resonators; Resonance; Resonant frequency; Resonator filters; Temperature sensors; Voltage-controlled oscillators; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro Electro Mechanical Systems, 2005. MEMS 2005. 18th IEEE International Conference on

ISSN

1084-6999

Print_ISBN

0-7803-8732-5

Type

conf

DOI

10.1109/MEMSYS.2005.1453859

Filename

1453859