Title :
An IGZO TFT based in-cell capacitance touch sensor
Author :
Ruhai Fu ; Congwei Liao ; Chuanli Leng ; Shengdong Zhang
Author_Institution :
Sch. of Comput. & Inf. Eng., Peking Univ., Shenzhen, China
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
An in-cell active matrix capacitive touch sensor using IGZO TFT is proposed in this paper. The sensor does not need touch deformation, complicated detection mechanisms or extra components. In the sensor, touching events are identified as capacitive coupling between internal detection electrodes and touch objects. Then the coupling can be converted to voltage signal and amplified. TFT sizes are decreased for the high mobility and good uniformity of IGZO, which result in a significantly improved accuracy. A capacitance with the order of 1 fF caused by the coupling could be detected and converted to an adequate output voltage signal.
Keywords :
capacitive sensors; electrochemical electrodes; gallium compounds; indium compounds; tactile sensors; thin film sensors; thin film transistors; In2-xGaxZnO4-δ; TFT; amplified conversion; capacitance 1 fF; capacitive coupling; complicated detection mechanism; in-cell active matrix capacitive touch sensor; internal detection electrode; touch deformation; touch object; voltage signal conversion; Arrays; Capacitance; Couplings; Electrodes; Logic gates; Tactile sensors; Thin film transistors;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6467843
