DocumentCode
3420367
Title
An IGZO TFT based in-cell capacitance touch sensor
Author
Ruhai Fu ; Congwei Liao ; Chuanli Leng ; Shengdong Zhang
Author_Institution
Sch. of Comput. & Inf. Eng., Peking Univ., Shenzhen, China
fYear
2012
fDate
Oct. 29 2012-Nov. 1 2012
Firstpage
1
Lastpage
3
Abstract
An in-cell active matrix capacitive touch sensor using IGZO TFT is proposed in this paper. The sensor does not need touch deformation, complicated detection mechanisms or extra components. In the sensor, touching events are identified as capacitive coupling between internal detection electrodes and touch objects. Then the coupling can be converted to voltage signal and amplified. TFT sizes are decreased for the high mobility and good uniformity of IGZO, which result in a significantly improved accuracy. A capacitance with the order of 1 fF caused by the coupling could be detected and converted to an adequate output voltage signal.
Keywords
capacitive sensors; electrochemical electrodes; gallium compounds; indium compounds; tactile sensors; thin film sensors; thin film transistors; In2-xGaxZnO4-δ; TFT; amplified conversion; capacitance 1 fF; capacitive coupling; complicated detection mechanism; in-cell active matrix capacitive touch sensor; internal detection electrode; touch deformation; touch object; voltage signal conversion; Arrays; Capacitance; Couplings; Electrodes; Logic gates; Tactile sensors; Thin film transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location
Xi´an
Print_ISBN
978-1-4673-2474-8
Type
conf
DOI
10.1109/ICSICT.2012.6467843
Filename
6467843
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