An a-IGZO TFT pixel circuit for AMOLED with simultaneous VT compensation

Author

Chuanli Leng ; Congwei Liao ; Longyan Wang ; Shengdong Zhang

Author_Institution

Shenzhen Grad. Sch., Peking Univ., Shenzhen, China

fYear

2012

fDate

Oct. 29 2012-Nov. 1 2012

Firstpage

1

Lastpage

3

Abstract

In this paper, a four a-IGZO TFTs based pixel circuit with simultaneous V_T compensation function for AMOLED is proposed. The proposed circuit can not only simplify the peripheral circuits of the panel, but also compensate for both positive and negative V_T shift with a charging V_T-generation method. Simulation results show that the current changes only by 18.9% and 3.9% when ΔV_T is -3 V and 2 V, respectively. Furthermore, by applying the grouping driving scheme, the OLED lighting time can be largely increased which manifests superiority when applied to high resolution or high frame rate displays.

Keywords

II-VI semiconductors; LED displays; amorphous semiconductors; charge compensation; gallium compounds; indium compounds; organic light emitting diodes; thin film transistors; wide band gap semiconductors; zinc compounds; AMOLED; AMOLED displays; InGaZnO; OLED lighting time; a-IGZO TFT pixel circuit; charging voltage-generation method; grouping driving scheme; high frame rate displays; peripheral circuits; simultaneous voltage compensation; voltage -3 V; voltage 2 V; Active matrix organic light emitting diodes; Lighting; Logic gates; Programming; Thin film transistors; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on

Conference_Location

Xi´an

Print_ISBN

978-1-4673-2474-8

Type

conf

DOI

10.1109/ICSICT.2012.6467846

Filename

6467846