Title :
New degradation phenomenon in wide channel poly-Si TFTs fabricated by low temperature process
Author :
Inoue, Shingo ; Ohshima, H.
Author_Institution :
Seiko Epson Corp., Nagano, Japan
Abstract :
A new degradation phenomenon in low temperature (/spl les/425/spl deg/C) polycrystalline-silicon thin film transistors (poly-Si TFTs) has been investigated. The subthreshold characteristics are significantly shifted in the negative direction, which is particularly marked in wide (typical channel width: W=100 /spl mu/m) n-channel TFTs. It is considered that this degradation phenomenon is induced by the generation of holes and increase of the temperature during the operation.
Keywords :
elemental semiconductors; semiconductor technology; silicon; thin film transistors; 100 micron; 425 C; Si; degradation; low temperature fabrication; n-channel TFT; polycrystalline-silicon thin film transistor; subthreshold characteristics; wide channel poly-Si TFT; Degradation; Fabrication; Glass; Impact ionization; Liquid crystal displays; Open wireless architecture; Substrates; Temperature; Thin film transistors; Voltage;
Conference_Titel :
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3393-4
DOI :
10.1109/IEDM.1996.554096
