DocumentCode :
3420599
Title :
Impact of Quantum Confinement and Coulomb Blockade on the retention of nanocrystals based charge trapping memory
Author :
Ya-Hua Peng ; Fei Liu ; Rui Jin ; Kang-Liang Wei ; Gang Du ; Jin-Feng Kang ; Xiao-yan Liu
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
fYear :
2012
fDate :
Oct. 29 2012-Nov. 1 2012
Firstpage :
1
Lastpage :
3
Abstract :
In this paper, we evaluate the influence of Quantum Confinement and Coulomb Blockade on the retention characteristics of charge trapping memory with incorporating Si nanocrystals into the charge trapping layer using the self-consistent simulator we developed. The effects of Quantum Confinement and Coulomb Blockade under different charge trap densities, temperatures, nanocrystal sizes and tunneling oxide thicknesses are analyzed comprehensively. The results can be used to study the performance and mechanisms of nanocrystals based charge trapping memory.
Keywords :
Coulomb blockade; nanostructured materials; random-access storage; silicon compounds; superconductive tunnelling; Si3N4; charge trap density; charge trapping memory layer; coulomb blockade; nanocrystal sizing; nanocrystals retention characteristics; quantum confinement; self-consistent simulator; tunneling oxide thickness; Charge carrier processes; Logic gates; Nanocrystals; Potential well; Silicon; Temperature; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
Type :
conf
DOI :
10.1109/ICSICT.2012.6467854
Filename :
6467854
Link To Document :
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