Title :
Impact of Quantum Confinement and Coulomb Blockade on the retention of nanocrystals based charge trapping memory
Author :
Ya-Hua Peng ; Fei Liu ; Rui Jin ; Kang-Liang Wei ; Gang Du ; Jin-Feng Kang ; Xiao-yan Liu
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
In this paper, we evaluate the influence of Quantum Confinement and Coulomb Blockade on the retention characteristics of charge trapping memory with incorporating Si nanocrystals into the charge trapping layer using the self-consistent simulator we developed. The effects of Quantum Confinement and Coulomb Blockade under different charge trap densities, temperatures, nanocrystal sizes and tunneling oxide thicknesses are analyzed comprehensively. The results can be used to study the performance and mechanisms of nanocrystals based charge trapping memory.
Keywords :
Coulomb blockade; nanostructured materials; random-access storage; silicon compounds; superconductive tunnelling; Si3N4; charge trap density; charge trapping memory layer; coulomb blockade; nanocrystal sizing; nanocrystals retention characteristics; quantum confinement; self-consistent simulator; tunneling oxide thickness; Charge carrier processes; Logic gates; Nanocrystals; Potential well; Silicon; Temperature; Tunneling;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6467854