A steady-state and transient IGBT model valid for all free-carrier injection conditions

Author

Yue, Y. ; Liou, J.J. ; Batarseh, I.

Author_Institution

Dept. of Comput.-Aided Design, Harris Semicond. Corp., Melbourne, FL, USA

Volume

1

fYear

1997

fDate

23-27 Feb 1997

Firstpage

168

Abstract

The insulated-gate bipolar transistor (IGBT) is the most advanced and promising power switching device. This paper presents an analytical model for the steady-state and transient characteristics of such a device. The model is derived rigorously from the ambipolar transport equation and is valid for all free-carrier injection conditions, rather than just for a special case (i.e., low or high free-carrier injection) considered in the IGBT models reported to date in the literature. Results simulated from a two-dimensional device simulator called MEDICI are also included in support of the model

Keywords

digital simulation; electronic engineering computing; insulated gate bipolar transistors; power semiconductor switches; semiconductor device models; simulation; transient analysis; MEDICI; ambipolar transport equation; free-carrier injection conditions; insulated-gate bipolar transistor; power switching device; steady-state IGBT model; transient IGBT model; two-dimensional device simulator; Analytical models; Charge carrier processes; Electron mobility; Equations; Insulated gate bipolar transistors; Insulation; Medical simulation; Predictive models; Steady-state; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Applied Power Electronics Conference and Exposition, 1997. APEC '97 Conference Proceedings 1997., Twelfth Annual

Conference_Location

Atlanta, GA

Print_ISBN

0-7803-3704-2

Type

conf

DOI

10.1109/APEC.1997.581449

Filename

581449