Compensation of self-heating effect in DC and pulse characteristics of HBTs

Author

Zhu, Y. ; Twynam, J.K. ; Yagura, M. ; Hasegawa, M. ; Hasegawa, T. ; Eguchi, Y. ; Amano, Y. ; Suematsu, E. ; Sakuno, K. ; Matsumoto, N. ; Sato, H. ; Hashizume, N.

Author_Institution

Adv. Technol. Lab., Sharp Corp., Tenri, Japan

Volume

2

fYear

1999

fDate

13-19 June 1999

Firstpage

431

Abstract

A simple technique to compensate the self-heating effect in DC and pulse characteristics of HBTs is proposed and demonstrated. Due to the cancellation of the positive and negative thermal-electric feedback inside HBTs, the compensation is achieved by inserting a specified resistance in the base bias circuit. An analytical expression specifying the resistance is also presented.

Keywords

compensation; feedback; heterojunction bipolar transistors; microwave bipolar transistors; millimetre wave bipolar transistors; semiconductor device measurement; semiconductor device models; DC characteristics; HBTs; base bias circuit; pulse characteristics; resistance insertion; resistance specification; self-heating effect compensation; thermal-electric feedback cancellation; Circuit analysis; Delay effects; Feedback circuits; Heterojunction bipolar transistors; Laboratories; Negative feedback; Pulse measurements; Resistors; Thermal resistance; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1999 IEEE MTT-S International

Conference_Location

Anaheim, CA, USA

Print_ISBN

0-7803-5135-5

Type

conf

DOI

10.1109/MWSYM.1999.779795

Filename

779795