A novel high-Q inductor based on Si 3D MMIC technology and its application

Author

Kamogawa, K. ; Nishikawa, K. ; Tokumitsu, T. ; Tanaka, M.

Author_Institution

Innovation Lab., NTT Network Syst. Dev. Center, Kanagawa, Japan

Volume

2

fYear

1999

fDate

13-19 June 1999

Firstpage

489

Abstract

A novel high-Q spiral inductor, implemented on a conductive Si wafer by applying a 3D MMIC structure over it, is proposed. The proposed inductor effectively uses a 10-/spl mu/m-thick polyimide layer and ground plane with a window below the spiral. A Q-factor of 21.7 at 1.88 nH and 5.8 GHz is achieved. A 5 GHz-band LNA is also designed with the new inductors and Si BJT with f/sub max/ of 24 GHz, and the highest-class of performance was predicted with a 20 dB gain and a 2.5 dB noise figure.

Keywords

MMIC; MMIC amplifiers; Q-factor; bipolar MMIC; inductors; integrated circuit technology; polymer films; 10 micron; 2.5 dB; 20 dB; 24 GHz; 5.8 GHz; LNA application; Si; Si 3D MMIC technology; Si BJT MMIC; conductive Si wafer; high-Q inductor; low-noise amplifier design; monolithic spiral inductor; oscillators; polyimide layer; Dielectric substrates; Frequency; Gold; Inductors; Integrated circuit interconnections; MMICs; Parasitic capacitance; Passive circuits; Polyimides; Spirals;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1999 IEEE MTT-S International

Conference_Location

Anaheim, CA, USA

Print_ISBN

0-7803-5135-5

Type

conf

DOI

10.1109/MWSYM.1999.779808

Filename

779808