Title :
Generalized Kushner analysis of RF power amplifiers
Author :
Blakey, P.A. ; Johnson, E.M.
Author_Institution :
GaAs Technol. Dept., Motorola Inc., Tempe, AZ, USA
Abstract :
A new technique that accurately predicts the output power and drain efficiency of FET power amplifiers is described. This new technique uses a generalization of Kushner´s amplifier analysis method together with measured pulsed I-V data. The technique can be used to replace or supplement load-pull measurements that are performed during technology development and circuit design. Excellent agreement with experimental load-pull measurements is demonstrated for several different transistor technologies over a broad range of load resistances.
Keywords :
network analysis; power amplifiers; radiofrequency amplifiers; FET power amplifiers; RF power amplifiers; amplifier analysis method; drain efficiency; generalized Kushner analysis; output power; pulsed I-V data; Circuit synthesis; Electrical resistance measurement; FETs; Performance evaluation; Power amplifiers; Power generation; Pulse amplifiers; Pulse measurements; Radio frequency; Radiofrequency amplifiers;
Conference_Titel :
Microwave Symposium Digest, 1999 IEEE MTT-S International
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
0-7803-5135-5
DOI :
10.1109/MWSYM.1999.779815
