Title :
Formation of NiSiGe on compressivly strained SiGe thin layers
Author :
Xiong-Xiong Du ; Lei Sun ; Yi Wang ; Knoll, Lars ; Mussler, Gregor ; Hollaeder, B. ; Mantl, Siegfried ; QingTai Zhao
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
In this work, we studied the nickel germano-silicide formation on thin SiGe layers epitaxially-grown on silicon substrate. Single crystal NiSiGe film with a thickness of 5.5nm was formed at 400°C and showed a low specific resistance of 30uΩcm. A thicker NiSiGe layer resulted from a thicker Ni showed poly-crystalline structure with rough surface and interface. We also found Ge and Ni diffuse simultaneously to the silicon substrate during germane-silicidation, causing degradation of the NiSiGe layers.
Keywords :
CVD coatings; Ge-Si alloys; epitaxial growth; nickel compounds; surface roughness; NiSiGe; SiGe; compressively strained thin layers; epitaxial growth; polycrystalline structure; rough surface; size 5.5 nm; temperature 400 C; Films; Germanium; Nickel; Resistance; Silicon; Silicon germanium; Substrates;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6467868
