A fully-integrated bandpass amplifier for extracellular neural recording

Author

Olsson, R.H., III ; Gulari, M.N. ; Wise, K.D.

Author_Institution

Eng. Res. Center for Wireless Integrated Microsystems, Michigan Univ., Ann Arbor, MI, USA

fYear

2003

fDate

20-22 March 2003

Firstpage

165

Lastpage

168

Abstract

This paper describes a fully-integrated bandpass amplifier for neural recording applications. Diode-connected sub-threshold-biased NMOS transistors in the feedback loop of the amplifier realize the high on-chip impedance necessary to eliminate the dc baseline potential of the electrode while amplifying neural field and action potentials. The amplifier has an in-band gain of 38.2dB, a dc gain of 0, an upper cutoff frequency of 24kHz and a low frequency cutoff of 66mHz. It consumes 92μW from ±1.5V supplies and has an input-referred noise of 16.6μVrms integrated from 100Hz-10kHz. The amplifier occupies 0.082mm² in 3μm features and is being used on a 64-site neural recording probe.

Keywords

bioelectric potentials; biomedical electrodes; biomedical electronics; feedback amplifiers; microelectrodes; 38.2 dB; 92 muW; DC baseline potential; action potentials; capacitively-coupled recording amplifier; diode-connected transistors; extracellular neural recording; feedback loop; fully-integrated bandpass amplifier; high on-chip impedance; integrated preamplifiers; microelectrode; sub-threshold-biased NMOS transistors; Diodes; Electrodes; Extracellular; Filters; Impedance; Integrated circuit interconnections; MOSFETs; Optical amplifiers; Preamplifiers; Probes;

fLanguage

English

Publisher

ieee

Conference_Titel

Neural Engineering, 2003. Conference Proceedings. First International IEEE EMBS Conference on

Print_ISBN

0-7803-7579-3

Type

conf

DOI

10.1109/CNE.2003.1196783

Filename

1196783