Title :
2-V 0.8-/spl mu/M CMOS monolithic RF filter for GSM receivers
Author :
Yan, W.S.T. ; Mak, R.K.C. ; Luong, H.C.
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, Hong Kong
Abstract :
A 2-V monolithic CMOS second-order RF filter for GSM receiver front-ends is presented. A negative transconductance cell is used to compensate the loss of on-chip inductors for the purpose of Q-tuning. By using a Miller capacitor, center-frequency tuning can be achieved to compensate for process variation. A prototype was fabricated by 0.8 /spl mu/m N-well single-poly-triple-metal CMOS technology and occupies an area of 868.2/spl times/748.4 /spl mu/m/sup 2/. The Q value can vary from 3.4 to 629 and center frequency (f/sub c/) can vary from 687 to 830 MHz. For Q of 30 and f/sub c/ of 829.6 MHz, the filter achieves a power gain of 2.0 dB, a noise figure of 24.5 dB, 1-dB compression point of -34 dBm, input referred third-order intercept point of -22 dBm, image rejection of 24.2 dB, and power dissipation of 45.8 mW.
Keywords :
CMOS analogue integrated circuits; Q-factor; UHF filters; UHF integrated circuits; active filters; cellular radio; circuit tuning; compensation; integrated circuit design; radio receivers; 0.8 micron; 2 V; 2 dB; 24.5 dB; 45.8 mW; 687 to 830 MHz; CMOS active filter; GSM receivers; Miller capacitor; Q-tuning; center-frequency tuning; monolithic RF filter; n-well CMOS technology; negative transconductance cell; onchip inductor loss compensation; process variation compensation; receiver front-ends; second-order RF filter; single-poly-triple-metal CMOS process; CMOS technology; Capacitors; GSM; Gain; Inductors; Power filters; Prototypes; Radio frequency; Transconductance; Tuning;
Conference_Titel :
Microwave Symposium Digest, 1999 IEEE MTT-S International
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
0-7803-5135-5
DOI :
10.1109/MWSYM.1999.779826
