Thick metal CMOS technology on high resistivity substrate for monolithic 980 MHz and 1.9 GHz CMOS LNAs

Author

Kim, C.S. ; Park, M. ; Kim, C.H. ; Yu, H.K. ; Lee, Yu.K. ; Kim, D.Y. ; Cho, H.

Author_Institution

Micro-Electron. Technol. Lab., Electron. & Telecommun. Res. Inst., Taejon, South Korea

Volume

2

fYear

1999

fDate

13-19 June 1999

Firstpage

573

Abstract

Thick metal CMOS technology on high resistivity substrate (RF CMOS technology) is demonstrated for the RF IC applications, and we firstly implemented it in monolithic 900 MHz and 1.9 GHz LNAs. The 1.9 GHz LNA shows a NF of 2.8 dB that is an excellent noise performance compared with the off-chip matched CMOS LNAs. Also the 900 MHz LNA shows a high gain of 18.8 dB and NF of 3.2 dB. The proposed RF CMOS technology is a very simple process, showing a high reproducibility, and the monolithic LNAs employing the technology show a good and uniform RF performances.

Keywords

CMOS analogue integrated circuits; CMOS integrated circuits; UHF amplifiers; UHF integrated circuits; integrated circuit design; integrated circuit noise; integrated circuit technology; substrates; 1.9 GHz; 18.8 dB; 2.8 dB; 3.2 dB; 900 MHz; CMOS LNA; RF CMOS technology; RF IC applications; high resistivity substrate; monolithic LNAs; noise performance; thick metal CMOS technology; Application specific integrated circuits; CMOS integrated circuits; CMOS technology; Conductivity; Gain; Integrated circuit noise; Monolithic integrated circuits; Noise measurement; Radio frequency; Radiofrequency integrated circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1999 IEEE MTT-S International

Conference_Location

Anaheim, CA, USA

Print_ISBN

0-7803-5135-5

Type

conf

DOI

10.1109/MWSYM.1999.779827

Filename

779827