• DocumentCode
    3420927
  • Title

    Low-motional-impedance highly-tunable I2 resonators for temperature-compensated reference oscillators

  • Author

    Ho, Gavin K. ; Sundaresan, Karthikeyan ; Pourkamali, Siavash ; Ayazi, Farrokh

  • Author_Institution
    Georgia Inst. of Technol., Atlanta, GA, USA
  • fYear
    2005
  • fDate
    30 Jan.-3 Feb. 2005
  • Firstpage
    116
  • Lastpage
    120
  • Abstract
    A new capacitive micromechanical resonator design optimized for high Q, low motional impedance, and large tuning range is presented. The I2 resonator was fabricated using a conservative, by present standards, HARPSS-on-SOI process, and demonstrated quality factors up to 57000 in vacuum. From the designed resonators between 3MHz and 6MHz, the lowest measured impedance is 24kΩ and the largest electrostatic tuning coefficient is -10ppm/V2. An oscillator interface circuit comprising of a trans-impedance amplifier and an automatic tunable charge pump providing an automatic temperature-compensating bias voltage was also designed and fabricated in a standard 0.5μm CMOS process. Preliminary tests show temperature drift reduction of a 4MHz resonator from 2400ppm to 240ppm over a 90°C range.
  • Keywords
    CMOS integrated circuits; Q-factor; micromechanical resonators; oscillators; silicon-on-insulator; 0.5 micron; 3 to 6 MHz; CMOS process; HARPSS-on-SOI process; automatic temperature-compensating bias voltage; automatic tunable charge pump; capacitive micromechanical resonator; electrostatic tuning coefficient; highly-tunable I2 resonators; low-motional-impedance I2 resonators; oscillator interface circuit; quality factors; temperature drift reduction; temperature-compensated reference oscillators; trans-impedance amplifier; Charge pumps; Circuit optimization; Design optimization; Electrostatic measurements; Impedance measurement; Micromechanical devices; Oscillators; Q factor; Tunable circuits and devices; Tuning;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro Electro Mechanical Systems, 2005. MEMS 2005. 18th IEEE International Conference on
  • ISSN
    1084-6999
  • Print_ISBN
    0-7803-8732-5
  • Type

    conf

  • DOI
    10.1109/MEMSYS.2005.1453881
  • Filename
    1453881