Title :
A novel over-current protection for digital power amplifier
Author :
Yong Xu ; Fei Zhao ; Rui Min ; Zhen Sun ; Ying Huang
Author_Institution :
Inst. of Commun. Eng., PLA Univ. of Sci. & Technol., Nanjing, China
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
The paper presents a novel over current protection circuit in digital power amplifier. The over current protection circuit would be used to shut down the output buffer when two output pins short-circuit to power supply, short-circuit to ground or short-circuit to each other. Chip achieves a maxim power of 2.75W and maxim efficiency of 92% at a 4Ohm load when power supply voltage is 5V. Chip operates in a wide supply voltage area from 3V to 5.5V. It is fabricated in 0.35um, double poly, triple metal CMOS process. It achieves a THD as low as 0.1%, with a flat band response between 20 Hz and 20 KHz. The over-current threshold is about 3A.
Keywords :
CMOS integrated circuits; buffer circuits; overcurrent protection; power amplifiers; short-circuit currents; digital power amplifier; double poly CMOS process; flat band response; frequency 20 Hz to 20 kHz; output buffer; output pins short-circuit; over current protection circuit; resistance 4 ohm; size 0.35 mum; triple metal CMOS process; voltage 3 V to 5.5 V; Current measurement; Detectors; MOSFETs; Pins; Power amplifiers; Power supplies; Pulse width modulation;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6467872
