DocumentCode :
3420944
Title :
1.1 GHz silicon blade nano-electromechanical resonator featuring 20 nm gap lateral transducers
Author :
Agache, V. ; Legrand, B. ; Collard, D. ; Fujita, H. ; Buchaillot, L.
Author_Institution :
LIMMS/IIS, Tokyo Univ., Japan
fYear :
2005
fDate :
30 Jan.-3 Feb. 2005
Firstpage :
121
Lastpage :
124
Abstract :
For the first time, an electromechanical resonator based on a blade geometry is proposed. This particular geometry allows self-alignment of the mechanical resonator to its lateral electrodes while achieving high eigenfrequencies in the GHz range.
Keywords :
elemental semiconductors; micromechanical resonators; nanotechnology; silicon; 1.1 GHz; Si; blade geometry; eigenfrequencies; lateral transducers; silicon blade nanoelectromechanical resonator; Blades; Electrodes; Energy consumption; Geometry; Radio frequency; Resonance; Silicon; Transceivers; Transducers; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro Electro Mechanical Systems, 2005. MEMS 2005. 18th IEEE International Conference on
ISSN :
1084-6999
Print_ISBN :
0-7803-8732-5
Type :
conf
DOI :
10.1109/MEMSYS.2005.1453882
Filename :
1453882
Link To Document :
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