DocumentCode
3420944
Title
1.1 GHz silicon blade nano-electromechanical resonator featuring 20 nm gap lateral transducers
Author
Agache, V. ; Legrand, B. ; Collard, D. ; Fujita, H. ; Buchaillot, L.
Author_Institution
LIMMS/IIS, Tokyo Univ., Japan
fYear
2005
fDate
30 Jan.-3 Feb. 2005
Firstpage
121
Lastpage
124
Abstract
For the first time, an electromechanical resonator based on a blade geometry is proposed. This particular geometry allows self-alignment of the mechanical resonator to its lateral electrodes while achieving high eigenfrequencies in the GHz range.
Keywords
elemental semiconductors; micromechanical resonators; nanotechnology; silicon; 1.1 GHz; Si; blade geometry; eigenfrequencies; lateral transducers; silicon blade nanoelectromechanical resonator; Blades; Electrodes; Energy consumption; Geometry; Radio frequency; Resonance; Silicon; Transceivers; Transducers; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Micro Electro Mechanical Systems, 2005. MEMS 2005. 18th IEEE International Conference on
ISSN
1084-6999
Print_ISBN
0-7803-8732-5
Type
conf
DOI
10.1109/MEMSYS.2005.1453882
Filename
1453882
Link To Document