• DocumentCode
    3421010
  • Title

    Anchor loss simulation in resonators

  • Author

    Binder, D.S. ; Quévy, Emmanuel ; Koyama, Tsuyoshi ; Govindjee, Sanjay ; Demmel, James W. ; Howe, Roger T.

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
  • fYear
    2005
  • fDate
    30 Jan.-3 Feb. 2005
  • Firstpage
    133
  • Lastpage
    136
  • Abstract
    Surface-micromachined resonators and filters are attractive for many RF applications. While existing simulation tools allow designers to compute resonant frequencies, few tools provide estimates of the damping in these devices. This paper reports on a new tool that allows designers, for the first time, to compute anchor losses in high-frequency resonators and account for sub-surface scatterers. By exercising the tool on a family of radially driven disk resonators, we show that the anchor loss mechanism for this class of devices involves a parasitic mixed-mode bending action that pumps energy into the substrate. Further, using the tool, we predict a large variation in resonator quality depending upon film thickness. Our simulation shows that the source of this variation is a complex radial-to-bending motion interaction, which we visualize with a root-locus diagram. We experimentally verify this predicted sensitivity using poly-SiGe disk resonators having Q´s ranging from 200 to 54,000.
  • Keywords
    micromachining; micromechanical resonators; SiGe; complex radial-to-bending motion interaction; damping estimation; disk resonators; film thickness; high-frequency resonators; resonant frequencies; resonator quality; root-locus diagram; subsurface scatterers; surface-micromachined filters; surface-micromachined resonators; Computational modeling; Elastodynamics; Energy loss; Finite element methods; Q factor; Reflection; Resonant frequency; Resonator filters; Scattering; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro Electro Mechanical Systems, 2005. MEMS 2005. 18th IEEE International Conference on
  • ISSN
    1084-6999
  • Print_ISBN
    0-7803-8732-5
  • Type

    conf

  • DOI
    10.1109/MEMSYS.2005.1453885
  • Filename
    1453885