Title :
Optimal design and experimental characterization of high-gain GaInP/GaAs HBT distributed amplifiers
Author :
Mohammadi, S. ; Park, J.W. ; Pavlidis, D. ; Guyaux, J.L. ; Garcia, J.C.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
The design methodology of high-gain GaInP/GaAs HBT distributed amplifiers is presented. Distributed amplifiers with different active cells and number of stages have been compared for high-gain (>12 dB) and high-bandwidth (>25 GHz) performance. Based on the results, a 3-stage distributed amplifier with a S/sub 21/ gain of 12.7 dB over 27.5 GHz bandwidth was successfully fabricated and tested.
Keywords :
III-V semiconductors; distributed amplifiers; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; jitter; optical receivers; 12 to 12.7 dB; 25 to 27.5 GHz; GaInP-GaAs; HBT distributed amplifiers; S/sub 21/ gain; active cells; high-bandwidth performance; high-gain amplifiers; optical receivers; Bandwidth; Circuits; Design methodology; Distributed amplifiers; Frequency; Gain; Gallium arsenide; Heterojunction bipolar transistors; Jitter; Optical receivers;
Conference_Titel :
Microwave Symposium Digest, 1999 IEEE MTT-S International
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
0-7803-5135-5
DOI :
10.1109/MWSYM.1999.779853
