W-band amplifier fabricated by optical stepper lithography

Author

Werthof, A. ; Grave, T. ; Kellner, W.

Author_Institution

Corp. Technol., Siemens AG, Munich, Germany

Volume

2

fYear

1999

fDate

13-19 June 1999

Firstpage

689

Abstract

A 3-stage 90-100 GHz amplifier has been designed and fabricated using optical stepper lithography which is suited for a high volume production of low cost millimeter wave integrated circuits. The amplifier demonstrates 14.7 dB gain at 94 GHz in conjunction with a noise figure of 6 dB and 9 dBm output power for 1 dB gain compression. The saturated output power is 11 dBm which corresponds to an output power density of 157 mW/mm.

Keywords

HEMT integrated circuits; MMIC amplifiers; field effect MIMIC; integrated circuit manufacture; integrated circuit technology; millimetre wave amplifiers; photolithography; 14.7 dB; 6 dB; 90 to 100 GHz; AlGaAs-InGaAs; EHF; HEMT110 process technology; W-band amplifier fabrication; high volume production; low cost MM-wave ICs; millimeter wave integrated circuits; optical stepper lithography; three-stage amplifier; Gain; Lithography; Optical amplifiers; Optical design; Optical noise; Optical saturation; Power amplifiers; Power generation; Semiconductor optical amplifiers; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1999 IEEE MTT-S International

Conference_Location

Anaheim, CA, USA

Print_ISBN

0-7803-5135-5

Type

conf

DOI

10.1109/MWSYM.1999.779854

Filename

779854