Title :
Large-signal model of triple-gate MESFET/PHEMT for switch applications
Author :
Wei, C.J. ; Johnson, D. ; Manzura, O. ; Tkachenko, Y.A. ; Bartle, D.
Author_Institution :
Alpha Ind. Inc., Woburn, MA, USA
Abstract :
A large-signal model of triple-gate MESFETs/PHEMTs is developed for switch applications. The devices are represented as multiple transistors connected in series. Systematic extraction procedure, including extrinsic parameters, is described. The model has been verified by comparing simulated dc characteristics, S-parameters and power performance of switches with measured results. As an example of applications, a feed-through circuit is simulated and preliminary experimental data supports the validity of the model.
Keywords :
S-parameters; microwave field effect transistors; microwave power transistors; microwave switches; power HEMT; power MESFET; power semiconductor switches; semiconductor device models; S-parameters; extrinsic parameters; feed-through circuit; large-signal model; multiple transistors; simulated dc characteristics; switch applications; systematic extraction procedure; triple-gate MESFET; triple-gate PHEMT; Circuit simulation; Circuit testing; Electrical resistance measurement; Equations; Equivalent circuits; MESFET circuits; PHEMTs; Power system modeling; Semiconductor device modeling; Switches;
Conference_Titel :
Microwave Symposium Digest, 1999 IEEE MTT-S International
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
0-7803-5135-5
DOI :
10.1109/MWSYM.1999.779867
